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Influence des paramètres physiques et géométriques du transistor à effet de champ MESFET GaAs

dc.contributor.authorDebab, Ilhem / Dahmane, Meriem / Encadre par Bentahar, Tarek
dc.date.accessioned2023-01-23T15:14:07Z
dc.date.available2023-01-23T15:14:07Z
dc.date.issued2022-05-13
dc.description.abstracten_US
dc.description.provenanceSubmitted by Tom User (dspacest@univ-tebessa.dz) on 2023-01-23T15:14:07Z No. of bitstreams: 1 IMPLEMENTATION ET ANALYSE DE LA.pdf: 6110476 bytes, checksum: 3d6a199f364bb189c24e341644085561 (MD5)en
dc.description.provenanceMade available in DSpace on 2023-01-23T15:14:07Z (GMT). No. of bitstreams: 1 IMPLEMENTATION ET ANALYSE DE LA.pdf: 6110476 bytes, checksum: 3d6a199f364bb189c24e341644085561 (MD5) Previous issue date: 2022-05-13en
dc.identifier.urihttp//localhost:8080/jspui/handle/123456789/7037
dc.language.isofren_US
dc.subjectInfluence des paramètres physiques et géométriques du transistor à effet de champ MESFET GaAsen_US
dc.subjectا خٌشا زٔیسخىس رو الأثش ا حٌم يٍ.  MESFET GaAs .  ص اّ .Schottkyen_US
dc.titleInfluence des paramètres physiques et géométriques du transistor à effet de champ MESFET GaAsen_US
dc.typeThesisen_US

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